IRFD024

Symbol Micros: TIRFD024
Contractor Symbol:
Case : PDIP04HVMDIP
Transistor N-Channel MOSFET; 60V; 20V; 100mOhm; 2,5A; 1,3W; -55°C ~ 175°C;
Parameters
Open channel resistance: 100mOhm
Max. drain current: 2,5A
Max. power loss: 1,3W
Case: PDIP04HVMDIP
Manufacturer: VISHAY
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
Manufacturer:: Siliconix Manufacturer part number: IRFD024PBF RoHS Case style: PDIP04HVMDIP  
In stock:
50 pcs.
Quantity of pcs. 1+ 3+ 10+ 50+ 200+
Net price (EUR) 0,9414 0,6911 0,5529 0,4743 0,4480
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Packaging:
50
Manufacturer:: Vishay Manufacturer part number: IRFD024PBF Case style: PDIP04HVMDIP  
External warehouse:
550 pcs.
Quantity of pcs. 50+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,5079
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Packaging:
50
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: Vishay Manufacturer part number: IRFD024PBF Case style: PDIP04HVMDIP  
External warehouse:
2100 pcs.
Quantity of pcs. 400+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,4480
Add to comparison tool
Packaging:
100
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 100mOhm
Max. drain current: 2,5A
Max. power loss: 1,3W
Case: PDIP04HVMDIP
Manufacturer: VISHAY
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Mounting: THT