IRFD110
Symbol Micros:
TIRFD110
Case : PDIP04HVMDIP
Transistor N-Channel MOSFET; 100V; 20V; 540mOhm; 1A; 1,3W; -55°C ~ 175°C;
Parameters
Open channel resistance: | 540mOhm |
Max. drain current: | 1A |
Max. power loss: | 1,3W |
Case: | PDIP04HVMDIP |
Manufacturer: | VISHAY |
Max. drain-source voltage: | 100V |
Transistor type: | N-MOSFET |
Manufacturer:: Siliconix
Manufacturer part number: IRFD110PBF RoHS
Case style: PDIP04HVMDIP
In stock:
50 pcs.
Quantity of pcs. | 2+ | 10+ | 30+ | 100+ | 400+ |
---|---|---|---|---|---|
Net price (EUR) | 0,6521 | 0,4094 | 0,3403 | 0,3023 | 0,2832 |
Manufacturer:: Vishay
Manufacturer part number: IRFD110PBF
Case style: PDIP04HVMDIP
External warehouse:
1050 pcs.
Quantity of pcs. | 50+ (Need a significantly larger quantity? Ask for price). |
---|---|
Net price (EUR) | 0,2832 |
Open channel resistance: | 540mOhm |
Max. drain current: | 1A |
Max. power loss: | 1,3W |
Case: | PDIP04HVMDIP |
Manufacturer: | VISHAY |
Max. drain-source voltage: | 100V |
Transistor type: | N-MOSFET |
Max. gate-source Voltage: | 20V |
Operating temperature (range): | -55°C ~ 175°C |
Mounting: | THT |
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