IRFD210

Symbol Micros: TIRFD210

46031

TIRFD210

Contractor Symbol:

Case : PDIP04HVMDIP

Datasheet

Technical drawing Add to favourites

N-MOSFET 0.6A 200V 1W 1.5Ω

Parameters

Open channel resistance:	1,5Ohm
Max. drain current:	600mA
Max. power loss:	1W
Case:	PDIP04HVMDIP
Manufacturer:	VISHAY
Max. drain-source voltage:	200V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Siliconix Manufacturer part number: IRFD210 RoHS Case style: PDIP04HVMDIP  

In stock:

100 pcs.

Quantity of pcs.	2+	15+	100+	300+	1000+
Net price (EUR)	0,5815	0,3223	0,2545	0,2405	0,2321

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Packaging:
100 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	1,5Ohm
Max. drain current:	600mA
Max. power loss:	1W
Case:	PDIP04HVMDIP
Manufacturer:	VISHAY
Max. drain-source voltage:	200V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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