IRFH5006TRPBF 

Symbol Micros: TIRFH5006
Contractor Symbol:
Case : PQFN08 (6x5mm)
Transistor N-Channel MOSFET; 60V; 20V; 4,1mOhm; 21A; 3,6W; -55°C~150°C; Substitute: IRFH5006TRPBF;
Parameters
Open channel resistance: 4,1mOhm
Max. drain current: 21A
Max. power loss: 3,6W
Case: PQFN08 (6x5mm)
Manufacturer: INFINEON
Max. drain-source voltage: 60V
Max. drain-gate voltage: 10V
Manufacturer:: Infineon Manufacturer part number: IRFH5006TRPBF Case style: PQFN08 (6x5mm)  
External warehouse:
4000 pcs.
Quantity of pcs. 4000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,6696
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Packaging:
4000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 4,1mOhm
Max. drain current: 21A
Max. power loss: 3,6W
Case: PQFN08 (6x5mm)
Manufacturer: INFINEON
Max. drain-source voltage: 60V
Max. drain-gate voltage: 10V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD