IRFH5020 

Symbol Micros: TIRFH5020

172650

TIRFH5020

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Datasheet

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Transistor N-Channel MOSFET; 200V; 20V; 55mOhm; 5,1A; 3,6W; -55°C~150°C; Substitute: IRFH5020TRPBF;

Parameters

Open channel resistance:	55mOhm
Max. drain current:	5,1A
Max. power loss:	3,6W
Case:	PQFN08 (6x5mm)
Manufacturer:	INFINEON
Max. drain-source voltage:	200V
Max. drain-gate voltage:	10V

All parameters

Manufacturer:: Infineon Manufacturer part number: IRFH5020TRPBF Case style: PQFN08 (6x5mm)  

External warehouse:

4000 pcs.

Quantity of pcs.	4000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,5468

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Packaging:
4000

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Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	55mOhm
Max. drain current:	5,1A
Max. power loss:	3,6W
Case:	PQFN08 (6x5mm)
Manufacturer:	INFINEON
Max. drain-source voltage:	200V
Max. drain-gate voltage:	10V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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