IRFP4668PBF

Symbol Micros: TIRFP4668

77772

TIRFP4668

Contractor Symbol:

Case : TO247AC

Datasheet

Technical drawing Add to favourites

Tranzystor N-MOSFET; 200V; 30V; 9,7mOhm; 130A; 520W; -55°C ~ 175°C; Odpowiednik: IRFP4668PBF; IRFP4668PBFXKMA1; IRFP4668;

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Parameters

Open channel resistance:	9,7mOhm
Max. drain current:	130A
Max. power loss:	520W
Case:	TO247AC
Manufacturer:	Infineon (IRF)
Max. drain-source voltage:	200V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: IRFP4668PBF RoHS Case style: TO247AC  

In stock:

30 pcs.

Quantity of pcs.	1+	5+	25+	100+	200+
Net price (EUR)	4,3088	3,7031	3,4442	3,3420	3,3135

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Packaging:
25 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	9,7mOhm
Max. drain current:	130A
Max. power loss:	520W
Case:	TO247AC
Manufacturer:	Infineon (IRF)
Max. drain-source voltage:	200V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	THT

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