IRFR1010Z

Symbol Micros: TIRFR1010z
Contractor Symbol:
Case : TO252
N-MOSFET HEXFET 42A 55V 140W 0.0075Ω
Parameters
Open channel resistance: 7,5mOhm
Max. drain current: 42A
Max. power loss: 140W
Case: TO252
Manufacturer: Infineon (IRF)
Max. drain-source voltage: 55V
Transistor type: N-MOSFET
Manufacturer:: Infineon Manufacturer part number: IRFR1010ZTRLPBF Case style: TO252  
External warehouse:
3000 pcs.
Quantity of pcs. 3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,5974
Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: Infineon Manufacturer part number: IRFR1010ZTRPBF Case style: TO252  
External warehouse:
1100 pcs.
Quantity of pcs. 50+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,5546
Add to comparison tool
Packaging:
50
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: Infineon Manufacturer part number: IRFR1010ZTRPBF Case style: TO252  
External warehouse:
24000 pcs.
Quantity of pcs. 2000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,4662
Add to comparison tool
Packaging:
2000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 7,5mOhm
Max. drain current: 42A
Max. power loss: 140W
Case: TO252
Manufacturer: Infineon (IRF)
Max. drain-source voltage: 55V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Mounting: SMD