IRFR4104TRPBF

Symbol Micros: TIRFR4104 VBS

366136

TIRFR4104 VBS

Contractor Symbol:

Case : TO252

Datasheet

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Transistor N-Channel MOSFET; 40V; 25V; 5mOhm; 85A; 200W; -55°C~150°C; Substitute: IRFR4104TRPBF-VB;

Parameters

Open channel resistance:	5mOhm
Max. drain current:	85A
Max. power loss:	200W
Case:	TO252
Manufacturer:	VBsemi
Max. drain-source voltage:	40V
Max. drain-gate voltage:	10V

All parameters

Manufacturer:: VBsemi Manufacturer part number: IRFR4104TRPBF-VB RoHS Case style: TO252t/r Datasheet

In stock:

100 pcs.

Quantity of pcs.	1+	5+	20+	100+	400+
Net price (EUR)	1,1396	0,7986	0,6795	0,6212	0,6001

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Packaging:
100 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	5mOhm
Max. drain current:	85A
Max. power loss:	200W
Case:	TO252
Manufacturer:	VBsemi
Max. drain-source voltage:	40V
Max. drain-gate voltage:	10V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	25V
Operating temperature (range):	-55°C ~ 150°C

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