IRFR5410
Symbol Micros:
TIRFR5410 TEC
Case : TO252
Transistor P-Channel MOSFET; 100V; 20V; 210mOhm; 13A; 66W; -55°C~175°C; Replacement: IRFR5410TRPBF; IRFR5410TRLPBF; IRFR5410PBF; IRFR5410PBF-GURT
Parameters
Open channel resistance: | 210mOhm |
Max. drain current: | 13A |
Max. power loss: | 66W |
Case: | TO252 |
Manufacturer: | TECH PUBLIC |
Max. drain-source voltage: | 100V |
Max. drain-gate voltage: | 10V |
Open channel resistance: | 210mOhm |
Max. drain current: | 13A |
Max. power loss: | 66W |
Case: | TO252 |
Manufacturer: | TECH PUBLIC |
Max. drain-source voltage: | 100V |
Max. drain-gate voltage: | 10V |
Transistor type: | P-MOSFET |
Max. gate-source Voltage: | 20V |
Operating temperature (range): | -55°C ~ 175°C |
Mounting: | SMD |
Add Symbol
Cancel
All Contractor Symbols