IRFS31N20D

Symbol Micros: TIRFS31N20D

43665

TIRFS31N20D

Contractor Symbol:

Case : TO263 (D2PAK)

Datasheet

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N-MOSFET 31A 200V 3,1W

Parameters

Open channel resistance:	82mOhm
Max. drain current:	31A
Max. power loss:	200W
Case:	TO263 (D2PAK)
Manufacturer:	Infineon (IRF)
Max. drain-source voltage:	200V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: International Rectifier Manufacturer part number: IRFS31N20DTRLP RoHS Case style: TO263t/r (D2PAK) Datasheet

In stock:

30 pcs.

Quantity of pcs.	1+	3+	10+	50+	200+
Net price (EUR)	1,5644	1,1937	0,9885	0,8649	0,8230

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Packaging:
50 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	82mOhm
Max. drain current:	31A
Max. power loss:	200W
Case:	TO263 (D2PAK)
Manufacturer:	Infineon (IRF)
Max. drain-source voltage:	200V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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