IRFSL9N60A smd

Symbol Micros: TIRFSl9n60a

11863

TIRFSl9n60a

Contractor Symbol:

Case : TO262

Datasheet

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Transistor N-MOSFET; 600V; 30V; 750mOhm; 9,2A; 170W; -55°C ~ 150°C; IRFSL9N60A; IRFSL9N60APBF;

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Parameters

Open channel resistance:	750mOhm
Max. drain current:	9,2A
Max. power loss:	170W
Case:	TO262
Manufacturer:	International Rectifier
Max. drain-source voltage:	600V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	750mOhm
Max. drain current:	9,2A
Max. power loss:	170W
Case:	TO262
Manufacturer:	International Rectifier
Max. drain-source voltage:	600V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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