IRG4BC30FD-S
Symbol Micros:
TIRG4bc30fd-s
Case : TO263 (D2PAK)
Transistor IGBT ; 600V; 20V; 31A; 120A; 100W; 3,0V~6,0V; 77nC; -55°C~150°C;
Parameters
Gate charge: | 77nC |
Max. dissipated power: | 100W |
Max. collector current: | 31A |
Max collector current (impulse): | 120A |
Forvard volatge [Vgeth]: | 3,0V ~ 6,0V |
Case: | TO263 (D2PAK) |
Manufacturer: | International Rectifier |
Gate charge: | 77nC |
Max. dissipated power: | 100W |
Max. collector current: | 31A |
Max collector current (impulse): | 120A |
Forvard volatge [Vgeth]: | 3,0V ~ 6,0V |
Case: | TO263 (D2PAK) |
Manufacturer: | International Rectifier |
Collector-emitter voltage: | 600V |
Operating temperature (range): | -55°C ~ 150°C |
Gate-emitter voltage: | 20V |
Mounting: | SMD |
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