IRG4BH20K-LPBF

Symbol Micros: TIRG4bh20k-L
Contractor Symbol:
Case : TO262
Trans IGBT Chip N-CH 1200V 11A 60000mW
Parameters
Gate charge: 43nC
Max. dissipated power: 60W
Max. collector current: 11A
Max collector current (impulse): 22A
Forvard volatge [Vgeth]: 3,5V ~ 6,5V
Case: TO262
Manufacturer: International Rectifier
Manufacturer:: Infineon Manufacturer part number: IRG4BH20K-LPBF Case style: TO262  
In stock:
1 pcs.
Quantity of pcs. 1+ 3+ 10+ 30+ 100+
Net price (EUR) 1,7776 1,4089 1,1976 1,1013 1,0449
Add to comparison tool
Packaging:
1
Gate charge: 43nC
Max. dissipated power: 60W
Max. collector current: 11A
Max collector current (impulse): 22A
Forvard volatge [Vgeth]: 3,5V ~ 6,5V
Case: TO262
Manufacturer: International Rectifier
Collector-emitter voltage: 1200V
Operating temperature (range): -55°C ~ 150°C
Gate-emitter voltage: 20V
Mounting: THT