IRL520NS
Symbol Micros:
TIRL520ns
Case : TO263 (D2PAK)
N-MOSFET HEXFET 100V 10A 3.8W 0.18Ω
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Parameters
Open channel resistance: | 260mOhm |
Max. drain current: | 10A |
Max. power loss: | 48W |
Case: | TO263 (D2PAK) |
Manufacturer: | Infineon (IRF) |
Max. drain-source voltage: | 100V |
Transistor type: | N-MOSFET |
Manufacturer:: Infineon
Manufacturer part number: IRL520NSTRL RoHS
Case style: TO263 (D2PAK)
In stock:
388 pcs.
Quantity of pcs. | 1+ | 5+ | 20+ | 100+ | 500+ |
---|---|---|---|---|---|
Net price (EUR) | 1,0754 | 0,7154 | 0,5915 | 0,5330 | 0,5120 |
Manufacturer:: Infineon
Manufacturer part number: IRL520NSTRLPBF RoHS
Case style: TO263t/r (D2PAK)
In stock:
800 pcs.
Quantity of pcs. | 1+ | 5+ | 20+ | 100+ | 500+ |
---|---|---|---|---|---|
Net price (EUR) | 1,0754 | 0,7154 | 0,5915 | 0,5330 | 0,5120 |
Open channel resistance: | 260mOhm |
Max. drain current: | 10A |
Max. power loss: | 48W |
Case: | TO263 (D2PAK) |
Manufacturer: | Infineon (IRF) |
Max. drain-source voltage: | 100V |
Transistor type: | N-MOSFET |
Max. gate-source Voltage: | 16V |
Operating temperature (range): | -55°C ~ 175°C |
Mounting: | SMD |
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