IRLL024Z

Symbol Micros: TIRLL024z
Contractor Symbol:
Case : SOT223
N-MOSFET HEXFET 55V 5A 1W 0.06Ω
Parameters
Open channel resistance: 57,5mOhm
Max. drain current: 5,1A
Max. power loss: 2,8W
Case: SOT223
Manufacturer: Infineon (IRF)
Max. drain-source voltage: 55V
Transistor type: N-MOSFET
Manufacturer:: Infineon Manufacturer part number: IRLL024ZTRPBF RoHS Case style: SOT223t/r  
In stock:
470 pcs.
Quantity of pcs. 2+ 10+ 50+ 200+ 1000+
Net price (EUR) 0,8224 0,5210 0,4112 0,3738 0,3575
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Packaging:
2500
Manufacturer:: Infineon Manufacturer part number: IRLL024ZTRPBF Case style: SOT223  
External warehouse:
85000 pcs.
Quantity of pcs. 2500+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,3575
Add to comparison tool
Packaging:
2500
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: Infineon Manufacturer part number: IRLL024ZTRPBF Case style: SOT223  
External warehouse:
7500 pcs.
Quantity of pcs. 2500+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,3575
Add to comparison tool
Packaging:
2500
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 57,5mOhm
Max. drain current: 5,1A
Max. power loss: 2,8W
Case: SOT223
Manufacturer: Infineon (IRF)
Max. drain-source voltage: 55V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD