IRLL024Z

Symbol Micros: TIRLL024z

45142

TIRLL024z

Contractor Symbol:

Case : SOT223

Datasheet

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N-MOSFET HEXFET 55V 5A 1W 0.06Ω

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Parameters

Open channel resistance:	57,5mOhm
Max. drain current:	5,1A
Max. power loss:	2,8W
Case:	SOT223
Manufacturer:	Infineon (IRF)
Max. drain-source voltage:	55V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: IRLL024ZTRPBF RoHS Case style: SOT223t/r  

In stock:

470 pcs.

Quantity of pcs.	2+	10+	50+	200+	1000+
Net price (EUR)	0,8252	0,5228	0,4126	0,3751	0,3587

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Packaging:
2500 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	57,5mOhm
Max. drain current:	5,1A
Max. power loss:	2,8W
Case:	SOT223
Manufacturer:	Infineon (IRF)
Max. drain-source voltage:	55V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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