IRLML6401

Symbol Micros: TIRLML6401 HUA

365538

TIRLML6401 HUA

Contractor Symbol:

Case : SOT23

Datasheet

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Transistor P-MOSFET; 12V; 8V; 125mOhm; 4,3A; 1,3W; -55°C ~ 150°C; IRLML6401TRPBF

Parameters

Open channel resistance:	125mOhm
Max. drain current:	4,3A
Max. power loss:	1,3W
Case:	SOT23
Manufacturer:	HUASHUO
Max. drain-source voltage:	12V
Transistor type:	P-MOSFET

All parameters

Manufacturer:: HUASHUO Manufacturer part number: IRLML6401 RoHS Case style: SOT23t/r Datasheet

In stock:

1805 pcs.

Quantity of pcs.	5+	20+	100+	400+	1805+
Net price (EUR)	0,2208	0,1114	0,0671	0,0542	0,0491

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Packaging:
1805 Quantity (multiple: 1)

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Manufacturer:: HUASHUO Manufacturer part number: IRLML6401 RoHS Case style: SOT23t/r Datasheet

In stock:

750 pcs.

Quantity of pcs.	5+	20+	100+	400+	1805+
Net price (EUR)	0,2208	0,1114	0,0671	0,0542	0,0491

Add to comparison tool Add inquiry (RFQ)

Packaging:
815 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	125mOhm
Max. drain current:	4,3A
Max. power loss:	1,3W
Case:	SOT23
Manufacturer:	HUASHUO
Max. drain-source voltage:	12V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	8V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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