IRLML6401

Symbol Micros: TIRLML6401 VBS

365535

TIRLML6401 VBS

Contractor Symbol:

Case : SOT23

Datasheet

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Transistor P-MOSFET; 12V; 8V; 125mOhm; 4,3A; 1,3W; -55°C ~ 150°C; Substitute: IRLML6401TRPBF; IRLML6401PBF;

Parameters

Open channel resistance:	125mOhm
Max. drain current:	4,3A
Max. power loss:	1,3W
Case:	SOT23
Manufacturer:	VBSEMI ELEC
Max. drain-source voltage:	12V
Transistor type:	P-MOSFET

All parameters

Manufacturer:: VBsemi Manufacturer part number: IRLML6401TR RoHS Case style: SOT23t/r Datasheet

In stock:

43 pcs.

Quantity of pcs.	5+	20+	100+	500+	2000+
Net price (EUR)	0,2406	0,1322	0,0874	0,0729	0,0685

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Packaging:
500 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	125mOhm
Max. drain current:	4,3A
Max. power loss:	1,3W
Case:	SOT23
Manufacturer:	VBSEMI ELEC
Max. drain-source voltage:	12V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	8V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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