IRLR2905PBF HXY MOSFET

Symbol Micros: TIRLR2905 HXY
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Case : TO252 (DPACK)
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Transistor N-Channel MOSFET; 60V; 20V; 38mOhm; 30A; 34,7W; -55°C ~ 150°C; Equivalent: IRLR2905PBF; IRLR2905TRLPBF; IRLR2905TRPBF; IRLR2905TRRPBF; SP001572902; SP001569030; SP001558410; SP001558420;
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Parameters
Open channel resistance: 38mOhm
Max. drain current: 30A
Max. power loss: 34,7W
Case: TO252 (DPACK)
Manufacturer: HXY MOSFET
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
         
 
Item available on request
Open channel resistance: 38mOhm
Max. drain current: 30A
Max. power loss: 34,7W
Case: TO252 (DPACK)
Manufacturer: HXY MOSFET
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD

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