IRLR3636 IRLR3636PBF-GURT

Symbol Micros: TIRLR3636
Contractor Symbol:
Case : TO252 (DPACK)
N-MOSFET 50A 60V 143W 0.068Ω IRLR3636PBF IRLR3636TRPBF (2000/T&R) IRLR3636TRLPBF (3K/RL) IRLR3636PBF-GURT
Parameters
Open channel resistance: 8,3mOhm
Max. drain current: 99A
Max. power loss: 143W
Case: TO252 (DPACK)
Manufacturer: Infineon (IRF)
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
Manufacturer:: Infineon Manufacturer part number: IRLR3636TR RoHS Case style: TO252 (DPACK) t/r  
In stock:
1550 pcs.
Quantity of pcs. 1+ 5+ 20+ 100+ 400+
Net price (EUR) 1,5537 1,0888 0,9252 0,8458 0,8177
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Packaging:
2000
Manufacturer:: Infineon Manufacturer part number: IRLR3636TRLPBF Case style: TO252 (DPACK)  
External warehouse:
3000 pcs.
Quantity of pcs. 3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,8177
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Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: Infineon Manufacturer part number: IRLR3636TRPBF Case style: TO252 (DPACK)  
External warehouse:
4550 pcs.
Quantity of pcs. 50+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,8177
Add to comparison tool
Packaging:
50
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 8,3mOhm
Max. drain current: 99A
Max. power loss: 143W
Case: TO252 (DPACK)
Manufacturer: Infineon (IRF)
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
Max. gate-source Voltage: 16V
Operating temperature (range): -55°C ~ 175°C
Mounting: SMD