IRLR3636 IRLR3636PBF-GURT
Symbol Micros:
TIRLR3636
Case : TO252 (DPACK)
N-MOSFET 50A 60V 143W 0.068Ω IRLR3636PBF IRLR3636TRPBF (2000/T&R) IRLR3636TRLPBF (3K/RL) IRLR3636PBF-GURT
Parameters
Open channel resistance: | 8,3mOhm |
Max. drain current: | 99A |
Max. power loss: | 143W |
Case: | TO252 (DPACK) |
Manufacturer: | Infineon (IRF) |
Max. drain-source voltage: | 60V |
Transistor type: | N-MOSFET |
Manufacturer:: Infineon
Manufacturer part number: IRLR3636TR RoHS
Case style: TO252 (DPACK) t/r
In stock:
1550 pcs.
Quantity of pcs. | 1+ | 5+ | 20+ | 100+ | 400+ |
---|---|---|---|---|---|
Net price (EUR) | 1,5537 | 1,0888 | 0,9252 | 0,8458 | 0,8177 |
Manufacturer:: Infineon
Manufacturer part number: IRLR3636TRLPBF
Case style: TO252 (DPACK)
External warehouse:
3000 pcs.
Quantity of pcs. | 3000+ (Need a significantly larger quantity? Ask for price). |
---|---|
Net price (EUR) | 0,8177 |
Manufacturer:: Infineon
Manufacturer part number: IRLR3636TRPBF
Case style: TO252 (DPACK)
External warehouse:
4550 pcs.
Quantity of pcs. | 50+ (Need a significantly larger quantity? Ask for price). |
---|---|
Net price (EUR) | 0,8177 |
Open channel resistance: | 8,3mOhm |
Max. drain current: | 99A |
Max. power loss: | 143W |
Case: | TO252 (DPACK) |
Manufacturer: | Infineon (IRF) |
Max. drain-source voltage: | 60V |
Transistor type: | N-MOSFET |
Max. gate-source Voltage: | 16V |
Operating temperature (range): | -55°C ~ 175°C |
Mounting: | SMD |
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