IRLR3717

Symbol Micros: TIRLR3717
Contractor Symbol:
Case : TO252 (DPACK)
N-MOSFET HEXFET 20V 120A 89W 0.004Ω
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Parameters
Open channel resistance: 5,5mOhm
Max. drain current: 120A
Max. power loss: 89W
Case: TO252 (DPACK)
Manufacturer: Infineon (IRF)
Max. drain-source voltage: 20V
Transistor type: N-MOSFET
Manufacturer:: VBsemi Manufacturer part number: IRLR3717 RoHS Case style: TO252 (DPACK) t/r  
In stock:
0 pcs.
Quantity of pcs. 1+ 5+ 20+ 100+ 500+
Net price (EUR) 0,9235 0,6149 0,5073 0,4582 0,4395
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Packaging:
200
Manufacturer:: VBsemi Manufacturer part number: IRLR3717TRPBF-VB RoHS Case style: TO252 (DPACK) t/r  
In stock:
0 pcs.
Quantity of pcs. 1+ 5+ 20+ 100+ 500+
Net price (EUR) 0,9235 0,6149 0,5073 0,4582 0,4395
Add to comparison tool
Packaging:
100
Open channel resistance: 5,5mOhm
Max. drain current: 120A
Max. power loss: 89W
Case: TO252 (DPACK)
Manufacturer: Infineon (IRF)
Max. drain-source voltage: 20V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Mounting: SMD