IRLR3717

Symbol Micros: TIRLR3717

44789

TIRLR3717

Contractor Symbol:

Case : TO252 (DPACK)

Datasheet

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N-MOSFET HEXFET 20V 120A 89W 0.004Ω

Parameters

Open channel resistance:	5,5mOhm
Max. drain current:	120A
Max. power loss:	89W
Case:	TO252 (DPACK)
Manufacturer:	Infineon (IRF)
Max. drain-source voltage:	20V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: VBsemi Manufacturer part number: IRLR3717 RoHS Case style: TO252 (DPACK) t/r  

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0 pcs.

Quantity of pcs.	1+	5+	30+	250+	500+
Net price (EUR)	0,9906	0,6589	0,5257	0,4790	0,4720

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250 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	5,5mOhm
Max. drain current:	120A
Max. power loss:	89W
Case:	TO252 (DPACK)
Manufacturer:	Infineon (IRF)
Max. drain-source voltage:	20V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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