IRLR3915

Symbol Micros: TIRLR3915

44790

TIRLR3915

Contractor Symbol:

Case : TO252 (DPACK)

Datasheet

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N-MOSFET HEXFET 55V 30A 120W 0.014Ω

Parameters

Open channel resistance:	17mOhm
Max. drain current:	61A
Max. power loss:	120W
Case:	TO252 (DPACK)
Manufacturer:	Infineon (IRF)
Max. drain-source voltage:	55V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: International Rectifier Manufacturer part number: IRLR3915 RoHS Case style: TO252 (DPACK) t/r Datasheet

In stock:

200 pcs.

Quantity of pcs.	2+	10+	50+	200+	1000+
Net price (EUR)	0,8177	0,5187	0,4089	0,3715	0,3551

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Packaging:
200 Quantity (multiple: 1)

- +

Manufacturer:: Infineon Manufacturer part number: IRLR3915TRPBF Case style: TO252 (DPACK)  

External warehouse:

950 pcs.

Quantity of pcs.	1+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,4201

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Packaging:
1

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Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	17mOhm
Max. drain current:	61A
Max. power loss:	120W
Case:	TO252 (DPACK)
Manufacturer:	Infineon (IRF)
Max. drain-source voltage:	55V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	16V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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