IXFN360N10T

Symbol Micros: TIXFN360n10t
Contractor Symbol:
Case : SOT227B
Tranzystor N-Channel MOSFET; 100V; 100V; 20V; 2,6mOhm; 360A; 830W; -55°C ~ 175°C;
Parameters
Open channel resistance: 2,6mOhm
Max. drain current: 360A
Max. power loss: 830W
Case: SOT227B
Manufacturer: IXYS
Max. drain-source voltage: 100V
Max. drain-gate voltage: 100V
Manufacturer:: LITTELFUSE Manufacturer part number: IXFN360N10T Case style: SOT227B  
External warehouse:
274 pcs.
Quantity of pcs. 10+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 20,3953
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Packaging:
10
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: LITTELFUSE Manufacturer part number: IXFN360N10T Case style: SOT227B  
External warehouse:
280 pcs.
Quantity of pcs. 1+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 24,0356
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Packaging:
1
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: IXYS Manufacturer part number: IXFN360N10T Case style: SOT227B  
External warehouse:
10 pcs.
Quantity of pcs. 10+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 20,8157
Add to comparison tool
Packaging:
10
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 2,6mOhm
Max. drain current: 360A
Max. power loss: 830W
Case: SOT227B
Manufacturer: IXYS
Max. drain-source voltage: 100V
Max. drain-gate voltage: 100V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Mounting: Screw