MBT3904DW1T1G

Symbol Micros: TMBT3904dw1t1g c

409472

TMBT3904dw1t1g c

Contractor Symbol:

Case : SOT363

Datasheet

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40V 200mW 300@10mA,1V 200mA 2 NPN SOT-363 Bipolar Transistors - BJT ROHS LRC LMBT3904DW1T1G;

Parameters

Power dissipation:	200mW
Manufacturer:	FUXINSEMI
Current gain factor:	300
Case:	SOT363
Cutoff frequency:	300MHz
Max. collector current:	200mA
Max collector-emmiter voltage:	40V

All parameters

         

 

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• Parameters

Power dissipation:	200mW
Manufacturer:	FUXINSEMI
Current gain factor:	300
Case:	SOT363
Cutoff frequency:	300MHz
Max. collector current:	200mA
Max collector-emmiter voltage:	40V
Operating temperature (range):	-55°C ~ 150°C
Transistor type:	2xNPN

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