MJD127T4G HXY MOSFET

Symbol Micros: TMJD127 HXY
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Case : TO252 (DPACK)
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Transistor Darlington PNP; 12000; 1,5W; 100V; 8A; -55°C ~ 150°C; Equivalent: MJD127G; MJD127T4G; MJD127-TP;
Parameters
Power dissipation: 1,5W
Current gain factor: 12000
Manufacturer: HXY MOSFET
Case: TO252 (DPACK)
Max. collector current: 8A
Max collector-emmiter voltage: 100V
Operating temperature (range): -55°C ~ 150°C
Manufacturer:: HXY MOSFET Manufacturer part number: MJD127T4G RoHS Case style: TO252 (DPACK) t/r Datasheet
In stock:
300 pcs.
Quantity of pcs. 3+ 10+ 50+ 300+ 1500+
Net price (EUR) 0,3165 0,2021 0,1422 0,1208 0,1149
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Packaging:
300
Power dissipation: 1,5W
Current gain factor: 12000
Manufacturer: HXY MOSFET
Case: TO252 (DPACK)
Max. collector current: 8A
Max collector-emmiter voltage: 100V
Operating temperature (range): -55°C ~ 150°C
Transistor type: Darlington PNP

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