MJD31CT4G
Symbol Micros:
TMJD31c ONS
Case : TO252
Transistor NPN; 50; 1,56W; 100V; 3A; 3MHz; -65°C ~ 150°C; Replacement: MJD31CRLG(T&R); MJD31CT4G(T&R); MJD31CG(Tube); MJD31CTF; MJD31T4G; MJD31CT4G; MJD31CG;
Any questions? We will be happy to answer.
Write sales // micros.com.pl or call: +48 785 054 437
Write sales // micros.com.pl or call: +48 785 054 437
Parameters
Power dissipation: | 1,56W |
Cutoff frequency: | 3MHz |
Current gain factor: | 50 |
Manufacturer: | ON SEMICONDUCTOR |
Case: | TO252 |
Max. collector current: | 3A |
Max collector-emmiter voltage: | 100V |
Power dissipation: | 1,56W |
Cutoff frequency: | 3MHz |
Current gain factor: | 50 |
Manufacturer: | ON SEMICONDUCTOR |
Case: | TO252 |
Max. collector current: | 3A |
Max collector-emmiter voltage: | 100V |
Operating temperature (range): | -65°C ~ 150°C |
Transistor type: | NPN |
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