MMBFJ111

Symbol Micros: TMMBFJ111

37093

TMMBFJ111

Contractor Symbol:

Case : SOT23

Datasheet

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N-JFET 50mA 35V 350mW (=PMBFJ111)

Parameters

Open channel resistance:	30Ohm
Max. drain current:	20mA
Max. power loss:	350mW
Case:	SOT23
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	35V
Transistor type:	N-JFET

All parameters

Manufacturer:: Fairchild Manufacturer part number: MMBFJ111 RoHS Case style: SOT23t/r Datasheet

In stock:

1475 pcs.

Quantity of pcs.	5+	20+	100+	500+	3000+
Net price (EUR)	0,2123	0,1077	0,0653	0,0517	0,0472

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Packaging:
3000 Quantity (multiple: 1)

- +

Manufacturer:: ON-Semicoductor Manufacturer part number: MMBFJ111 Case style: SOT23  

External warehouse:

6000 pcs.

Quantity of pcs.	3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,0904

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Packaging:
3000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	30Ohm
Max. drain current:	20mA
Max. power loss:	350mW
Case:	SOT23
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	35V
Transistor type:	N-JFET
Max. gate-source Voltage:	35V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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