MMBT5401
Symbol Micros:
TMMBT5401 c
Case : SOT23
Transistor PNP; Bipolar; 300; -150V; -5V; 100MHz; -600mA; 350mW; -55°C~150°C; MMBT5401-AU_R1_000A1; MMBT5401-YAN; MMBT5401-LGE;
Parameters
| Power dissipation: | 350mW |
| Current gain factor: | 300 |
| Cutoff frequency: | 100MHz |
| Manufacturer: | YFW |
| Case: | SOT23 |
| Max. collector current: | -600mA |
| Max collector-emmiter voltage: | -150V |
| Power dissipation: | 350mW |
| Current gain factor: | 300 |
| Cutoff frequency: | 100MHz |
| Manufacturer: | YFW |
| Case: | SOT23 |
| Max. collector current: | -600mA |
| Max collector-emmiter voltage: | -150V |
| Operating temperature (range): | -55°C ~ 150°C |
| Transistor type: | PNP |
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