MMBT5551 China

Symbol Micros: TMMBT5551 c

335282

TMMBT5551  c

Contractor Symbol:

Case : SOT23

Datasheet

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Transistor N-Channel MOSFET; 180V; 160V; 300; 300MHz 600mA; 300mW; -55°C~150°C; Substitute: MMBT5551-LGE; MMBT5551-TP; MMBT5551LT1; MMBT5551-YAN;

Parameters

Power dissipation:	600mW
Cutoff frequency:	300MHz
Current gain factor:	300
Manufacturer:	HOTTECH
Case:	SOT23
Max. collector current:	600mA
Max collector-emmiter voltage:	180V

All parameters

Manufacturer:: HOTTECH Manufacturer part number: MMBT5551 RoHS Case style: SOT23t/r Datasheet

In stock:

2000 pcs.

Quantity of pcs.	10+	50+	400+	3000+	12000+
Net price (EUR)	0,0661	0,0254	0,0124	0,0099	0,0094

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Packaging:
2000 Quantity (multiple: 10)

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Item in delivery

Estimated date:
2025-03-12

Quantity of pcs.: 15000

• Parameters

Power dissipation:	600mW
Cutoff frequency:	300MHz
Current gain factor:	300
Manufacturer:	HOTTECH
Case:	SOT23
Max. collector current:	600mA
Max collector-emmiter voltage:	180V
Operating temperature (range):	-55°C ~ 150°C
Transistor type:	NPN

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