MMBT5551 China

Symbol Micros: TMMBT5551 c
Contractor Symbol:
Case : SOT23
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Transistor N-Channel MOSFET; 180V; 160V; 300; 300MHz 600mA; 300mW; -55°C~150°C; Substitute: MMBT5551-TP; MMBT5551LT1; MMBT5551-YAN;
Parameters
Power dissipation: 600mW
Current gain factor: 300
Cutoff frequency: 300MHz
Manufacturer: HOTTECH
Case: SOT23
Max. collector current: 600mA
Max collector-emmiter voltage: 180V
Manufacturer:: HOTTECH Manufacturer part number: MMBT5551 RoHS Case style: SOT23t/r Datasheet
In stock:
2000 pcs.
Quantity of pcs. 10+ 30+ 100+ 500+ 2000+
Net price (EUR) 0,0643 0,0322 0,0176 0,0109 0,0092
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Packaging:
2000
Manufacturer:: HOTTECH Manufacturer part number: MMBT5551 RoHS Case style: SOT23t/r Datasheet
In stock:
6000 pcs.
Quantity of pcs. 10+ 50+ 400+ 3000+ 6000+
Net price (EUR) 0,0643 0,0247 0,0119 0,0095 0,0092
Add to comparison tool
Packaging:
3000/6000
Power dissipation: 600mW
Current gain factor: 300
Cutoff frequency: 300MHz
Manufacturer: HOTTECH
Case: SOT23
Max. collector current: 600mA
Max collector-emmiter voltage: 180V
Operating temperature (range): -55°C ~ 150°C
Transistor type: NPN

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