Bipolar tranzistor  MMBT5551 G1 WEJ

Symbol Micros: TMMBT5551 G1 WEJ

503453

TMMBT5551 G1 WEJ

Contractor Symbol:

Case : SOT23

Datasheet

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Transistor NPN; 30; 200mW; 30V; 600mA; 300MHz SOT23; WEJ;

Parameters

Power dissipation:	200mW
Current gain factor:	30
Cutoff frequency:	300MHz
Manufacturer:	WEJ
Case:	SOT23
Max. collector current:	600mA
Max collector-emmiter voltage:	30V

All parameters

Manufacturer:: WEJ Manufacturer part number: MMBT5551 G1 RoHS Case style: SOT23t/r Datasheet

In stock:

15000 pcs.

Quantity of pcs.	10+	50+	400+	3000+	12000+
Net price (EUR)	0,0673	0,0259	0,0127	0,0101	0,0096

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Packaging:
3000/15000 Quantity (multiple: 10)

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• Parameters

Power dissipation:	200mW
Current gain factor:	30
Cutoff frequency:	300MHz
Manufacturer:	WEJ
Case:	SOT23
Max. collector current:	600mA
Max collector-emmiter voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Transistor type:	NPN

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