MMBT5551LT1G

Symbol Micros: TMMBT5551 ON
Contractor Symbol:
Case : SOT23-3
Trans GP BJT NPN 160V 0.6A 300mW 3-Pin SOT-23 MMBT5551LT3G MMBT5551LT1
Parameters
Power dissipation: 300mW
Current gain factor: 250
Manufacturer: ON SEMICONDUCTOR
Case: SOT23-3
Max. collector current: 600mA
Max collector-emmiter voltage: 160V
Operating temperature (range): -55°C ~ 150°C
Manufacturer:: ON-Semicoductor Manufacturer part number: MMBT5551LT1G RoHS Case style: SOT23-3 t/r Datasheet
In stock:
5651 pcs.
Quantity of pcs. 5+ 20+ 100+ 500+ 3000+
Net price (EUR) 0,1215 0,0556 0,0304 0,0227 0,0202
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Packaging:
3000
Manufacturer:: ON-Semicoductor Manufacturer part number: MMBT5551LT1G Case style: SOT23-3  
External warehouse:
287951 pcs.
Quantity of pcs. 12000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,0202
Add to comparison tool
Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: ON-Semicoductor Manufacturer part number: MMBT5551LT1G Case style: SOT23-3  
External warehouse:
378998 pcs.
Quantity of pcs. 9000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,0202
Add to comparison tool
Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: ON-Semicoductor Manufacturer part number: MMBT5551LT3G Case style: SOT23-3  
External warehouse:
10000 pcs.
Quantity of pcs. 10000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,0202
Add to comparison tool
Packaging:
10000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Power dissipation: 300mW
Current gain factor: 250
Manufacturer: ON SEMICONDUCTOR
Case: SOT23-3
Max. collector current: 600mA
Max collector-emmiter voltage: 160V
Operating temperature (range): -55°C ~ 150°C
Transistor type: NPN