MMBT5551LT1G

Symbol Micros: TMMBT5551 ON

315316

TMMBT5551 ON

Contractor Symbol:

Case : SOT23-3

Datasheet

Technical drawing

Trans GP BJT NPN 160V 0.6A 300mW 3-Pin SOT-23 MMBT5551LT3G MMBT5551LT1

Parameters

Power dissipation:	300mW
Current gain factor:	250
Manufacturer:	ON SEMICONDUCTOR
Case:	SOT23-3
Max. collector current:	600mA
Max collector-emmiter voltage:	160V
Operating temperature (range):	-55°C ~ 150°C

All parameters

Manufacturer:: ON-Semicoductor Manufacturer part number: MMBT5551LT1G RoHS Case style: SOT23-3 t/r Datasheet

In stock:

5651 pcs.

Quantity of pcs.	5+	20+	100+	500+	3000+
Net price (EUR)	0,1243	0,0569	0,0311	0,0232	0,0207

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Packaging:
3000 Quantity (multiple: 1)

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• Parameters

Power dissipation:	300mW
Current gain factor:	250
Manufacturer:	ON SEMICONDUCTOR
Case:	SOT23-3
Max. collector current:	600mA
Max collector-emmiter voltage:	160V
Operating temperature (range):	-55°C ~ 150°C
Transistor type:	NPN

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