MMBT5551M3T5G

Symbol Micros: TMMBT5551m3

137632

TMMBT5551m3

Contractor Symbol:

Case : SOT723

Datasheet

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Trans GP BJT NPN 160V 0.06A 640mW 3-Pin SOT-723

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Parameters

Power dissipation:	640mW
Current gain factor:	250
Manufacturer:	ON SEMICONDUCTOR
Case:	SOT723
Max. collector current:	60mA
Max collector-emmiter voltage:	160V
Operating temperature (range):	-55°C ~ 150°C

All parameters

Manufacturer:: ON-Semicoductor Manufacturer part number: MMBT5551M3T5G RoHS Case style: SOT723 Datasheet

In stock:

90 pcs.

Quantity of pcs.	5+	20+	100+	300+	1000+
Net price (EUR)	0,2165	0,1185	0,0778	0,0671	0,0618

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Packaging:
100 Quantity (multiple: 1)

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• Parameters

Power dissipation:	640mW
Current gain factor:	250
Manufacturer:	ON SEMICONDUCTOR
Case:	SOT723
Max. collector current:	60mA
Max collector-emmiter voltage:	160V
Operating temperature (range):	-55°C ~ 150°C
Transistor type:	NPN

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