MMBT5551M3T5G

Symbol Micros: TMMBT5551m3

137632

TMMBT5551m3

Contractor Symbol:

Case : SOT723

Datasheet

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Trans GP BJT NPN 160V 0.06A 640mW 3-Pin SOT-723

Parameters

Power dissipation:	640mW
Current gain factor:	250
Manufacturer:	ON SEMICONDUCTOR
Case:	SOT723
Max. collector current:	60mA
Max collector-emmiter voltage:	160V
Operating temperature (range):	-55°C ~ 150°C

All parameters

Manufacturer:: ON-Semicoductor Manufacturer part number: MMBT5551M3T5G RoHS Case style: SOT723 Datasheet

In stock:

90 pcs.

Quantity of pcs.	5+	20+	100+	300+	1000+
Net price (EUR)	0,2125	0,1163	0,0764	0,0659	0,0607

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Packaging:
100 Quantity (multiple: 1)

- +

Manufacturer:: ON-Semicoductor Manufacturer part number: MMBT5551M3T5G Case style: SOT723  

External warehouse:

32000 pcs.

Quantity of pcs.	8000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,0607

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Packaging:
8000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Power dissipation:	640mW
Current gain factor:	250
Manufacturer:	ON SEMICONDUCTOR
Case:	SOT723
Max. collector current:	60mA
Max collector-emmiter voltage:	160V
Operating temperature (range):	-55°C ~ 150°C
Transistor type:	NPN

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