MMBT6517LT1G

Symbol Micros: TMMBT6517

51142

TMMBT6517

Contractor Symbol:

Case : SOT23

Datasheet

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NPN 100mA 350V 225mW 200MHz

Parameters

Power dissipation:	300mW
Current gain factor:	200
Cutoff frequency:	200MHz
Manufacturer:	ON SEMICONDUCTOR
Case:	SOT23
Max. collector current:	100mA
Max collector-emmiter voltage:	350V

All parameters

Manufacturer:: ON-Semicoductor Manufacturer part number: MMBT6517LT1G Pbf 1Z. Case style: SOT23t/r Datasheet

In stock:

500 pcs.

Quantity of pcs.	5+	20+	100+	500+	2000+
Net price (EUR)	0,2071	0,1046	0,0631	0,0500	0,0460

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Packaging:
500 Quantity (multiple: 1)

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• Parameters

Power dissipation:	300mW
Current gain factor:	200
Cutoff frequency:	200MHz
Manufacturer:	ON SEMICONDUCTOR
Case:	SOT23
Max. collector current:	100mA
Max collector-emmiter voltage:	350V
Operating temperature (range):	-55°C ~ 150°C
Transistor type:	NPN

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