MMBTA06LT1G

Symbol Micros: TMMBTA06lt1
Contractor Symbol:
Case : SOT23
Transistor NPN; 100; 300mW; 80V; 500mA; 100MHz; -55°C ~ 150°C; Replacement: MMBTA06LT1G; MMBTA06-DIO; MMBTA06 DIOTEC; MMBTA06-7-F Diodes; MMBTA06LT3G;
Parameters
Power dissipation: 300mW
Current gain factor: 100
Cutoff frequency: 100MHz
Manufacturer: ON SEMICONDUCTOR
Case: SOT23
Max. collector current: 500mA
Max collector-emmiter voltage: 80V
Manufacturer:: ON-Semicoductor Manufacturer part number: MMBTA06LT1G RoHS Case style: SOT23t/r Datasheet
In stock:
4956 pcs.
Quantity of pcs. 5+ 20+ 100+ 500+ 3000+
Net price (EUR) 0,1333 0,0612 0,0332 0,0250 0,0222
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Packaging:
3000
Manufacturer:: ON-Semicoductor Manufacturer part number: MMBTA06LT1G Case style: SOT23  
External warehouse:
2892000 pcs.
Quantity of pcs. 12000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,0222
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Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: ON-Semicoductor Manufacturer part number: MMBTA06LT3G Case style: SOT23  
External warehouse:
10000 pcs.
Quantity of pcs. 10000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,0222
Add to comparison tool
Packaging:
10000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Power dissipation: 300mW
Current gain factor: 100
Cutoff frequency: 100MHz
Manufacturer: ON SEMICONDUCTOR
Case: SOT23
Max. collector current: 500mA
Max collector-emmiter voltage: 80V
Operating temperature (range): -55°C ~ 150°C
Transistor type: NPN