MMBTA06LT1G

Symbol Micros: TMMBTA06lt1
Contractor Symbol:
Case : SOT23
Transistor NPN; 100; 300mW; 80V; 500mA; 100MHz; -55°C ~ 150°C; Replacement: MMBTA06LT1G; MMBTA06-DIO; MMBTA06 DIOTEC; MMBTA06-7-F Diodes; MMBTA06LT3G;
Parameters
Power dissipation: 300mW
Current gain factor: 100
Cutoff frequency: 100MHz
Manufacturer: ON SEMICONDUCTOR
Case: SOT23
Max. collector current: 500mA
Max collector-emmiter voltage: 80V
Manufacturer:: ON-Semicoductor Manufacturer part number: MMBTA06LT1G RoHS Case style: SOT23t/r Datasheet
In stock:
4056 pcs.
Quantity of pcs. 5+ 20+ 100+ 500+ 3000+
Net price (EUR) 0,1256 0,0576 0,0315 0,0235 0,0209
Add to comparison tool
Packaging:
3000
Power dissipation: 300mW
Current gain factor: 100
Cutoff frequency: 100MHz
Manufacturer: ON SEMICONDUCTOR
Case: SOT23
Max. collector current: 500mA
Max collector-emmiter voltage: 80V
Operating temperature (range): -55°C ~ 150°C
Transistor type: NPN