MMBTH10

Symbol Micros: TMMBTH10
Contractor Symbol:
Case : SOT23
NPN 25V 650MHz 225mW 50mA
Parameters
Power dissipation: 350mW
Cutoff frequency: 650MHz
Current gain factor: 60
Manufacturer: LGE
Case: SOT23
Max. collector current: 50mA
Max collector-emmiter voltage: 25V
Manufacturer:: ON-Semicoductor Manufacturer part number: MMBTH10LT1G Case style: SOT23  
External warehouse:
48000 pcs.
Quantity of pcs. 6000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,0272
Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: ON-Semicoductor Manufacturer part number: MMBTH10LT1G Case style: SOT23  
External warehouse:
1600 pcs.
Quantity of pcs. 100+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,0284
Add to comparison tool
Packaging:
100
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: ON-Semicoductor Manufacturer part number: MMBTH10M3T5G Case style: SOT23  
External warehouse:
16000 pcs.
Quantity of pcs. 8000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,0339
Add to comparison tool
Packaging:
8000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Power dissipation: 350mW
Cutoff frequency: 650MHz
Current gain factor: 60
Manufacturer: LGE
Case: SOT23
Max. collector current: 50mA
Max collector-emmiter voltage: 25V
Operating temperature (range): -55°C ~ 150°C
Transistor type: NPN