MMBTH10

Symbol Micros: TMMBTH10

90893

TMMBTH10

Contractor Symbol:

Case : SOT23

Datasheet

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NPN 25V 650MHz 225mW 50mA

Parameters

Power dissipation:	350mW
Current gain factor:	60
Cutoff frequency:	650MHz
Manufacturer:	LGE
Case:	SOT23
Max. collector current:	50mA
Max collector-emmiter voltage:	25V

All parameters

Manufacturer:: ON-Semicoductor Manufacturer part number: MMBTH10LT1G Case style: SOT23  

External warehouse:

48000 pcs.

Quantity of pcs.	6000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,0274

Add to comparison tool Add inquiry (RFQ)

Packaging:
3000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

Manufacturer:: ON-Semicoductor Manufacturer part number: MMBTH10LT1G Case style: SOT23  

External warehouse:

36000 pcs.

Quantity of pcs.	6000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,0288

Add to comparison tool Add inquiry (RFQ)

Packaging:
3000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Power dissipation:	350mW
Current gain factor:	60
Cutoff frequency:	650MHz
Manufacturer:	LGE
Case:	SOT23
Max. collector current:	50mA
Max collector-emmiter voltage:	25V
Operating temperature (range):	-55°C ~ 150°C
Transistor type:	NPN

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