MUN5211DW1T1G ONSemiconductor

Symbol Micros: TMUN5211dw

114909

TMUN5211dw

Contractor Symbol:

Case : SOT363

Datasheet

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2NPN 50V 100mA 250mW

Parameters

Power dissipation:	385mW
Current gain factor:	60
Manufacturer:	ON SEMICONDUCTOR
Case:	SOT363
Max. collector current:	100mA
Max collector-emmiter voltage:	50V
Operating temperature (range):	-55°C ~ 150°C

All parameters

Manufacturer:: ON-Semicoductor Manufacturer part number: MUN5211DW1T1G Case style: SOT363  

External warehouse:

561000 pcs.

Quantity of pcs.	9000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,0189

Add to comparison tool Add inquiry (RFQ)

Packaging:
3000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

Manufacturer:: ON-Semicoductor Manufacturer part number: MUN5211DW1T1G Case style: SOT363  

External warehouse:

384000 pcs.

Quantity of pcs.	6000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,0222

Add to comparison tool Add inquiry (RFQ)

Packaging:
3000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Power dissipation:	385mW
Current gain factor:	60
Manufacturer:	ON SEMICONDUCTOR
Case:	SOT363
Max. collector current:	100mA
Max collector-emmiter voltage:	50V
Operating temperature (range):	-55°C ~ 150°C
Transistor type:	2xNPN

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