MUN5212DW1T1G ONSemiconductor

Symbol Micros: TMUN5212dw
Contractor Symbol:
Case : SOT363
2NPN 50V 100mA 250mW
Parameters
Power dissipation: 385mW
Current gain factor: 100
Manufacturer: ON SEMICONDUCTOR
Case: SOT363
Max. collector current: 100mA
Max collector-emmiter voltage: 50V
Operating temperature (range): -55°C ~ 150°C
Manufacturer:: ON-Semicoductor Manufacturer part number: MUN5212DW1T1G RoHS Case style: SOT363 t/r Datasheet
In stock:
6000 pcs.
Quantity of pcs. 5+ 20+ 100+ 500+ 3000+
Net price (EUR) 0,1179 0,0542 0,0294 0,0220 0,0197
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Packaging:
3000/6000
Manufacturer:: ON-Semicoductor Manufacturer part number: MUN5212DW1T1G Case style: SOT363  
External warehouse:
57000 pcs.
Quantity of pcs. 6000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,0313
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Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: ON-Semicoductor Manufacturer part number: MUN5212DW1T1G Case style: SOT363  
External warehouse:
15000 pcs.
Quantity of pcs. 6000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,0284
Add to comparison tool
Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Power dissipation: 385mW
Current gain factor: 100
Manufacturer: ON SEMICONDUCTOR
Case: SOT363
Max. collector current: 100mA
Max collector-emmiter voltage: 50V
Operating temperature (range): -55°C ~ 150°C
Transistor type: 2xNPN