MUN5212DW1T1G ONSemiconductor
Symbol Micros:
TMUN5212dw
Case : SOT363
2NPN 50V 100mA 250mW
Parameters
Power dissipation: | 385mW |
Current gain factor: | 100 |
Manufacturer: | ON SEMICONDUCTOR |
Case: | SOT363 |
Max. collector current: | 100mA |
Max collector-emmiter voltage: | 50V |
Operating temperature (range): | -55°C ~ 150°C |
Manufacturer:: ON-Semicoductor
Manufacturer part number: MUN5212DW1T1G RoHS
Case style: SOT363 t/r
Datasheet
In stock:
6000 pcs.
Quantity of pcs. | 5+ | 20+ | 100+ | 500+ | 3000+ |
---|---|---|---|---|---|
Net price (EUR) | 0,1179 | 0,0542 | 0,0294 | 0,0220 | 0,0197 |
Manufacturer:: ON-Semicoductor
Manufacturer part number: MUN5212DW1T1G
Case style: SOT363
External warehouse:
57000 pcs.
Quantity of pcs. | 6000+ (Need a significantly larger quantity? Ask for price). |
---|---|
Net price (EUR) | 0,0313 |
Manufacturer:: ON-Semicoductor
Manufacturer part number: MUN5212DW1T1G
Case style: SOT363
External warehouse:
15000 pcs.
Quantity of pcs. | 6000+ (Need a significantly larger quantity? Ask for price). |
---|---|
Net price (EUR) | 0,0284 |
Power dissipation: | 385mW |
Current gain factor: | 100 |
Manufacturer: | ON SEMICONDUCTOR |
Case: | SOT363 |
Max. collector current: | 100mA |
Max collector-emmiter voltage: | 50V |
Operating temperature (range): | -55°C ~ 150°C |
Transistor type: | 2xNPN |
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