NDS355AN smd

Symbol Micros: TNDS355an

39401

TNDS355an

Contractor Symbol:

Case : SOT23

Datasheet

Technical drawing Add to favourites

N-MOSFET 1.7A 30V 0.5W 0.085Ω

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Parameters

Open channel resistance:	230mOhm
Max. drain current:	1,7A
Max. power loss:	500mW
Case:	SOT23
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	30V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: ON-Semicoductor Manufacturer part number: NDS355AN RoHS Case style: SOT23t/r  

In stock:

1874 pcs.

Quantity of pcs.	2+	10+	50+	200+	1000+
Net price (EUR)	0,6996	0,4422	0,3486	0,3182	0,3042

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Packaging:
3000 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	230mOhm
Max. drain current:	1,7A
Max. power loss:	500mW
Case:	SOT23
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	30V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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