NDT451AN

Symbol Micros: TNDT451an
Contractor Symbol:
Case : SOT223
Transistor N-Channel MOSFET; 30V; 10V; 35mOhm; 7,2A; 3W; -65°C~150°C;
Parameters
Open channel resistance: 35mOhm
Max. drain current: 7,2A
Max. power loss: 3W
Case: SOT223
Manufacturer: ONSEMI
Max. drain-source voltage: 30V
Max. drain-gate voltage: 10V
Manufacturer:: ON-Semicoductor Manufacturer part number: NDT451AN Case style: SOT223  
External warehouse:
4000 pcs.
Quantity of pcs. 4000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,4505
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Packaging:
4000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 35mOhm
Max. drain current: 7,2A
Max. power loss: 3W
Case: SOT223
Manufacturer: ONSEMI
Max. drain-source voltage: 30V
Max. drain-gate voltage: 10V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -65°C ~ 150°C
Mounting: SMD