NTD2955-1G

Symbol Micros: TNTD2955-1g
Contractor Symbol:
Case : TO251 (IPACK)
P-MOSFET 12A 60V 55W NTD2955T4G, NTD2955G
Parameters
Open channel resistance: 180mOhm
Max. drain current: 12A
Max. power loss: 55W
Case: TO251 (IPACK)
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 60V
Transistor type: P-MOSFET
         
 
Item available on request
Open channel resistance: 180mOhm
Max. drain current: 12A
Max. power loss: 55W
Case: TO251 (IPACK)
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 60V
Transistor type: P-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Mounting: THT