NTD5867NLT4G
Symbol Micros:
TNTD5867nl c
Case : TO252 (DPACK)
TO-252 MOSFETs ROHS Podobny do: CJ CJU20N06AYFW; YFW50N06AD; TECH PUBLIC NTD5867NLT4G; ONSEMI NTD5867NLT4G; VBSEMI NTD5867NLT4G-VB; HXY MOSFET NTD5867NLT4G-HXY; UMW NTD5867NLT4G(UMW);
Parameters
Open channel resistance: | 14mOhm |
Max. drain current: | 50A |
Max. power loss: | 45W |
Case: | TO252 |
Manufacturer: | YFW |
Max. drain-source voltage: | 60V |
Max. drain-gate voltage: | 2V |
Item in delivery
Estimated date:
2025-06-30
Quantity of pcs.: 200
Open channel resistance: | 14mOhm |
Max. drain current: | 50A |
Max. power loss: | 45W |
Case: | TO252 |
Manufacturer: | YFW |
Max. drain-source voltage: | 60V |
Max. drain-gate voltage: | 2V |
Transistor type: | N-MOSFET |
Max. gate-source Voltage: | 20V |
Operating temperature (range): | -55°C ~ 150°C |
Mounting: | SMD |
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