NTD5867NLT4G

Symbol Micros: TNTD5867nl c
Contractor Symbol:
Case : TO252 (DPACK)
TO-252 MOSFETs ROHS Podobny do: CJ CJU20N06AYFW; YFW50N06AD; TECH PUBLIC NTD5867NLT4G; ONSEMI NTD5867NLT4G; VBSEMI NTD5867NLT4G-VB; HXY MOSFET NTD5867NLT4G-HXY; UMW NTD5867NLT4G(UMW);
Parameters
Open channel resistance: 14mOhm
Max. drain current: 50A
Max. power loss: 45W
Case: TO252
Manufacturer: YFW
Max. drain-source voltage: 60V
Max. drain-gate voltage: 2V
Manufacturer:: YFW Manufacturer part number: YFW50N06AD RoHS Case style: TO252 (DPACK) t/r Datasheet
In stock:
2100 pcs.
Quantity of pcs. 3+ 20+ 100+ 300+ 1000+
Net price (EUR) 0,3203 0,1761 0,1384 0,1284 0,1230
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Packaging:
2500
         
 
Item in delivery
Estimated date:
2025-06-30
Quantity of pcs.: 200
Open channel resistance: 14mOhm
Max. drain current: 50A
Max. power loss: 45W
Case: TO252
Manufacturer: YFW
Max. drain-source voltage: 60V
Max. drain-gate voltage: 2V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD