NTGS4111PT1G 

Symbol Micros: TNTGS4111p
Contractor Symbol:
Case :  
Transistor P-Channel MOSFET; 30V; 20V; 60mOhm; 2,6A; 630mW; -55°C~150°C;
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Parameters
Open channel resistance: 60mOhm
Max. drain current: 2,6A
Max. power loss: 630mW
Case: TSOP06
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 30V
Max. drain-gate voltage: 10V
Manufacturer:: ON-Semicoductor Manufacturer part number: NTGS4111PT1G Case style: TSOP06  
External warehouse:
18000 pcs.
Quantity of pcs. 3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,1166
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Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 60mOhm
Max. drain current: 2,6A
Max. power loss: 630mW
Case: TSOP06
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 30V
Max. drain-gate voltage: 10V
Transistor type: P-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD