NTGS5120PT1G 

Symbol Micros: TNTGS5120p
Contractor Symbol:
Case : TSOP06
Transistor P-Channel MOSFET; 60V; 20V; 111mOhm; 1,8A; 600mW; -55°C~150°C;
Parameters
Open channel resistance: 111mOhm
Max. drain current: 1,8A
Max. power loss: 600mW
Case: TSOP06
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 60V
Max. drain-gate voltage: 10V
Manufacturer:: ON-Semicoductor Manufacturer part number: NTGS5120PT1G Case style: TSOP06  
External warehouse:
3000 pcs.
Quantity of pcs. 3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,1121
Add to comparison tool
Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: ON-Semicoductor Manufacturer part number: NTGS5120PT1G Case style: TSOP06  
External warehouse:
3000 pcs.
Quantity of pcs. 3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,1403
Add to comparison tool
Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: ON-Semicoductor Manufacturer part number: NTGS5120PT1G Case style: TSOP06  
External warehouse:
66000 pcs.
Quantity of pcs. 820+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,1403
Add to comparison tool
Packaging:
1
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 111mOhm
Max. drain current: 1,8A
Max. power loss: 600mW
Case: TSOP06
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 60V
Max. drain-gate voltage: 10V
Transistor type: P-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD