NTJD4401NT1G

Symbol Micros: TNTJD4401
Contractor Symbol:
Case : SOT363 t/r
2xN-MOSFET 20V 0.63A 0.55W
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Parameters
Open channel resistance: 445mOhm
Max. drain current: 910mA
Max. power loss: 550mW
Case: SOT363 t/r
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 20V
Transistor type: 2xN-MOSFET
Manufacturer:: ON-Semicoductor Manufacturer part number: NTJD4401 RoHS Case style: SOT363 t/r Datasheet
In stock:
100 pcs.
Quantity of pcs. 5+ 20+ 100+ 300+ 1000+
Net price (EUR) 0,2906 0,1584 0,1038 0,0898 0,0827
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Packaging:
100
Open channel resistance: 445mOhm
Max. drain current: 910mA
Max. power loss: 550mW
Case: SOT363 t/r
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 20V
Transistor type: 2xN-MOSFET
Max. gate-source Voltage: 12V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD