NTJD5121NT1G

Symbol Micros: TNTJD5121n
Contractor Symbol:
Case : SOT363
Trans MOSFET N-CH 60V 0.295A 6-Pin SOT-363
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Parameters
Open channel resistance: 2,5Ohm
Max. drain current: 295mA
Max. power loss: 250mW
Case: SOT363
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 60V
Transistor type: 2xN-MOSFET
Manufacturer:: ON-Semicoductor Manufacturer part number: NTJD5121NT1G RoHS Case style: SOT363 t/r Datasheet
In stock:
100 pcs.
Quantity of pcs. 5+ 20+ 100+ 300+ 1000+
Net price (EUR) 0,1987 0,0996 0,0592 0,0491 0,0442
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Packaging:
100
Manufacturer:: ON-Semicoductor Manufacturer part number: NTJD5121NT1G Case style: SOT363  
External warehouse:
39000 pcs.
Quantity of pcs. 3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,0442
Add to comparison tool
Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: ON-Semicoductor Manufacturer part number: NTJD5121NT1G Case style: SOT363  
External warehouse:
30000 pcs.
Quantity of pcs. 3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,0442
Add to comparison tool
Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 2,5Ohm
Max. drain current: 295mA
Max. power loss: 250mW
Case: SOT363
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 60V
Transistor type: 2xN-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD