NTS4173PT1G

Symbol Micros: TNTS4173pt1g
Contractor Symbol:
Case : SOT323
P-MOSFET 30V 1.2A
Parameters
Open channel resistance: 280mOhm
Max. drain current: 1,2A
Max. power loss: 290mW
Case: SOT323
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 30V
Transistor type: P-MOSFET
Manufacturer:: ON-Semicoductor Manufacturer part number: NTS4173PT1G RoHS Case style: SOT323 t/r Datasheet
In stock:
2795 pcs.
Quantity of pcs. 3+ 20+ 100+ 300+ 1000+
Net price (EUR) 0,3207 0,1704 0,1321 0,1218 0,1168
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Packaging:
3000
Manufacturer:: ON-Semicoductor Manufacturer part number: NTS4173PT1G Case style: SOT323  
External warehouse:
3000 pcs.
Quantity of pcs. 3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,1168
Add to comparison tool
Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: ON-Semicoductor Manufacturer part number: NTS4173PT1G Case style: SOT323  
External warehouse:
48000 pcs.
Quantity of pcs. 3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,1168
Add to comparison tool
Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 280mOhm
Max. drain current: 1,2A
Max. power loss: 290mW
Case: SOT323
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 30V
Transistor type: P-MOSFET
Max. gate-source Voltage: 12V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD