NXV90EPR

Symbol Micros: TNXV90EPR

348514

TNXV90EPR

Contractor Symbol:

Case : TO236-3 AB =>SOT23-3

Datasheet

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NXV90EP/SOT23/TO-236AB

Parameters

Open channel resistance:	210mOhm
Max. drain current:	1,5A
Max. power loss:	470mW
Case:	TO236-3 AB =>SOT23-3
Manufacturer:	NXP
Max. drain-source voltage:	30V
Transistor type:	P-MOSFET

All parameters

Manufacturer:: NXP Manufacturer part number: NXV90EPR RoHS Case style: SOT23-3 t/r Datasheet

In stock:

20 pcs.

Quantity of pcs.	3+	10+	50+	200+	1000+
Net price (EUR)	0,3007	0,1914	0,1343	0,1166	0,1091

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Packaging:
50 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	210mOhm
Max. drain current:	1,5A
Max. power loss:	470mW
Case:	TO236-3 AB =>SOT23-3
Manufacturer:	NXP
Max. drain-source voltage:	30V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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