PBRN113ET,215 NXP

Symbol Micros: TPBRN113et

93888

TPBRN113et

Contractor Symbol:

Case : SOT23-3

Datasheet

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NPN 40V 600mA 250mW

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Parameters

Power dissipation:	570mW
Current gain factor:	420
Manufacturer:	NXP
Case:	SOT23-3
Max. collector current:	700mA
Max collector-emmiter voltage:	40V
Operating temperature (range):	-65°C ~ 150°C

All parameters

Manufacturer:: NXP Manufacturer part number: PBRN113ET,215 RoHS Case style: SOT23-3 t/r Datasheet

In stock:

45 pcs.

Quantity of pcs.	3+	10+	50+	250+	1000+
Net price (EUR)	0,3040	0,1942	0,1362	0,1167	0,1107

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Packaging:
50/250 Quantity (multiple: 1)

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• Parameters

Power dissipation:	570mW
Current gain factor:	420
Manufacturer:	NXP
Case:	SOT23-3
Max. collector current:	700mA
Max collector-emmiter voltage:	40V
Operating temperature (range):	-65°C ~ 150°C
Transistor type:	NPN

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