PDTA123JT

Symbol Micros: TPDTA123jt
Contractor Symbol:
Case : SOT23
PNP; 100; 250mW; 50V; 100mA; 180MHz; -65°C ~ 150°C; PDTA123JT,215; PDTA123JT.215;
Parameters
Power dissipation: 250mW
Current gain factor: 100
Cutoff frequency: 180MHz
Manufacturer: NXP
Case: SOT23
Max. collector current: 100mA
Max collector-emmiter voltage: 50V
Manufacturer:: NXP Manufacturer part number: PDTA123JT RoHS Case style: SOT23t/r Datasheet
In stock:
3000 pcs.
Quantity of pcs. 10+ 50+ 200+ 1000+ 3000+
Net price (EUR) 0,0928 0,0367 0,0214 0,0156 0,0143
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Packaging:
3000
Manufacturer:: Nexperia Manufacturer part number: PDTA123JT,215 Case style: SOT23  
External warehouse:
66000 pcs.
Quantity of pcs. 12000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,0143
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Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: Nexperia Manufacturer part number: PDTA123JT,215 Case style: SOT23  
External warehouse:
351000 pcs.
Quantity of pcs. 12000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,0143
Add to comparison tool
Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Power dissipation: 250mW
Current gain factor: 100
Cutoff frequency: 180MHz
Manufacturer: NXP
Case: SOT23
Max. collector current: 100mA
Max collector-emmiter voltage: 50V
Operating temperature (range): -65°C ~ 150°C
Transistor type: PNP