PDTB113ZT NXP
Symbol Micros:
TPDTB113zt
Case : SOT23-3
PNP 50V 0.5A 250mW
Parameters
Power dissipation: | 250mW |
Current gain factor: | 70 |
Manufacturer: | NXP |
Case: | SOT23-3 |
Max. collector current: | 500mA |
Max collector-emmiter voltage: | 50V |
Operating temperature (range): | -65°C ~ 150°C |
Manufacturer:: NXP
Manufacturer part number: PDTB113ZT RoHS
Case style: SOT23-3 t/r
Datasheet
In stock:
150 pcs.
Quantity of pcs. | 5+ | 40+ | 250+ | 1000+ | 5000+ |
---|---|---|---|---|---|
Net price (EUR) | 0,2185 | 0,0780 | 0,0491 | 0,0423 | 0,0397 |
Manufacturer:: Nexperia
Manufacturer part number: PDTB113ZT,215
Case style: SOT23-3
External warehouse:
6000 pcs.
Quantity of pcs. | 6000+ (Need a significantly larger quantity? Ask for price). |
---|---|
Net price (EUR) | 0,0397 |
Manufacturer:: Nexperia
Manufacturer part number: PDTB113ZT,215
Case style: SOT23-3
External warehouse:
6000 pcs.
Quantity of pcs. | 6000+ (Need a significantly larger quantity? Ask for price). |
---|---|
Net price (EUR) | 0,0397 |
Power dissipation: | 250mW |
Current gain factor: | 70 |
Manufacturer: | NXP |
Case: | SOT23-3 |
Max. collector current: | 500mA |
Max collector-emmiter voltage: | 50V |
Operating temperature (range): | -65°C ~ 150°C |
Transistor type: | PNP |
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