PDTB113ZT NXP

Symbol Micros: TPDTB113zt
Contractor Symbol:
Case : SOT23-3
PNP 50V 0.5A 250mW
Parameters
Power dissipation: 250mW
Current gain factor: 70
Manufacturer: NXP
Case: SOT23-3
Max. collector current: 500mA
Max collector-emmiter voltage: 50V
Operating temperature (range): -65°C ~ 150°C
Manufacturer:: NXP Manufacturer part number: PDTB113ZT RoHS Case style: SOT23-3 t/r Datasheet
In stock:
150 pcs.
Quantity of pcs. 5+ 40+ 250+ 1000+ 5000+
Net price (EUR) 0,2185 0,0780 0,0491 0,0423 0,0397
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Packaging:
250
Manufacturer:: Nexperia Manufacturer part number: PDTB113ZT,215 Case style: SOT23-3  
External warehouse:
6000 pcs.
Quantity of pcs. 6000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,0397
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Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: Nexperia Manufacturer part number: PDTB113ZT,215 Case style: SOT23-3  
External warehouse:
6000 pcs.
Quantity of pcs. 6000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,0397
Add to comparison tool
Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Power dissipation: 250mW
Current gain factor: 70
Manufacturer: NXP
Case: SOT23-3
Max. collector current: 500mA
Max collector-emmiter voltage: 50V
Operating temperature (range): -65°C ~ 150°C
Transistor type: PNP