PDTC114ET 

Symbol Micros: TPDTC114et c

501780

TPDTC114et c

Contractor Symbol:

Case : SOT23

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Transistor NPN; 30; 200mW; 50V; 100mA; 250MHz; -55°C ~ 150°C; Equivalent: PDTC114ET,215; PDTC114ET,235;

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Parameters

Power dissipation:	200mW
Cutoff frequency:	250MHz
Current gain factor:	30
Case:	SOT23
Max. collector current:	100mA
Max collector-emmiter voltage:	50V
Operating temperature (range):	-55°C ~ 150°C

All parameters

         

 

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• Parameters

Power dissipation:	200mW
Cutoff frequency:	250MHz
Current gain factor:	30
Case:	SOT23
Max. collector current:	100mA
Max collector-emmiter voltage:	50V
Operating temperature (range):	-55°C ~ 150°C
Transistor type:	NPN

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